Misoriented Epitaxial Growth of (111)CoSi 2 on Offset (111)Si Substrates

MISORIENTED EPITAXIAL GROWTH OF (lll)CoSi2 ON OFFSET (lll)Si SUBSTRATES

Single crystal epitaxial films of CoSi2 were grown by MBE on various (111)Si single crystal substrates, whose surfaces were purposely tilted towards the < 1IO >, direction by small angles 4>, t, 0° :54>, :5 4°, measured between the surface normal and the < 111 >. direction of Si. The actual offset angle, 4>,, was determined by back Laue reflection method. The average perpendicular strain of the...

Epitaxial growth of DNA-assembled nanoparticle superlattices on patterned substrates.

DNA-functionalized nanoparticles, including plasmonic nanoparticles, can be assembled into a wide range of crystalline arrays via synthetically programmable DNA hybridization interactions. Here we demonstrate that such assemblies can be grown epitaxially on lithographically patterned templates, eliminating grain boundaries and enabling fine control over orientation and size of assemblies up to ...

Organic epitaxial layers on organic substrates

Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

Effect of a-HgI2 epitaxial growth on the defect structure of CdTe:Ge substrates

The a-HgI2 /CdTe:Ge heterostructures have been studied by cathodoluminescence ~CL! in the scanning electron microscope. The a-HgI2 expitaxial growth was shown to cause an enhancement of the CL intensity in a layer of the substrate extending up to about 500 mm from the a-HgI2 /CdTe:Ge interface. CL spectra of the layer reveal the appearance of a band related to tellurium vacancies as well as the...